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MBM29LV017 - 16M (2M x 8) BIT FLASH MEMORY

General Description

The MBM29LV017 is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each.

The 2M bytes of data is divided into 32 sectors of 64K bytes of flexible erase capability.

The 8 bits of data will appear on DQ0 to DQ7.

Key Features

  • Address specification is not necessary during command sequence.
  • Single 3.0 V read, program and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs.
  • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) 48-ball FBGA (Package suffix: PBT).
  • Minimum 100,000 program/erase cycles.
  • High performance 8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20857-4E FLASH MEMORY CMOS 16M (2M × 8) BIT MBM29LV017-80/-90/-12 s FEATURES • Address specification is not necessary during command sequence • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) 48-ball FBGA (Package suffix: PBT) • Minimum 100,000 program/erase cycles • High performance 80 ns maximum access time • Sector erase architecture Uniform sectors of 64K bytes each Any combination of sectors can be concurrently erased.